Michael S. Shur 
Patricia W. and C. Sheldon Roberts ’48 Chaired Professor in Solid State Electronics; Professor of Electrical, Computer, and Systems Engineering; Professor of Physics, Applied Physics and Astronomy; Director, Center for Broadband Data Transport Science and Technology
Contact:
(518) 276-2201
shurm@rpi.edu
Education:
M.S., Electrical Engineering, St. Petersburg Electrotechnical Institute, 1965.
Ph.D., Physics, A. F. Ioffe Institute of Physics and Technology, St. Petersburg, Russia, 1967.
Dr. Sc., Physics and Mathematics, A. F. Ioffe Institute of Physics and Technology, 1992.
Career Highlights:
Michael Shur joined RPI in 1996. He is Fellow of IEEE, APS (life), ECS, IET, WIF, Electromagnetic Academy, MRS, and AAAS, and member of Eta Kappa Nu, Tau Beta Pi, ASEE, Member, former Chair of Commission D and Member of NRC of US URSI, life member of IEEE MTT, SPIE, Sigma Xi, and Humboldt Society. Dr. Shur is Editor-in-Chief of IJHSES and related book series, Regional Editor of physica status solidi, Member of the Honorary Board of Solid State Electronics and JSTS International Advisory Committee, Vice-President for Publications of the IEEE Sensor Council, Distinguished Lecturer of IEEE EDS, former Distinguished Lecturer of IEEE MTT and, and former Associate Editor of IEEE ED Transactions. He is co-founder and VP of Sensor Electronics Technology, Inc. He published many technical papers and books and has over 40 patents. His awards include an Honorary Doctorate, IEEE Donald Fink Best Paper Award, IEEE Kirchmayer Award, the Gold Medal of the Russian Education Ministry, several Best Paper awards, van der Ziel Award, Senior Humboldt Research Award, Pioneer Award from Compound Semi, RPI Engineering Research Award, and Commendation for Excellence in Technical Communications. Dr. Shur is listed by the Institute of Scientific Information as Highly Cited Researcher. He is Foreign Member of the Lithuanian Academy of Sciences.
Research Interests:
Solid State Devices
Shur's work with plasma wave excitation in submicron field effect transistors (FET) and related device structures should allow his lab to develop a new generation of solid-state terahertz (THz) tunable devices that will support numerous applications in biotechnology, microelectronics, and defense. His research has shown that a short channel field effect transistor (FET) has a resonance response to electromagnetic radiation at the plasma oscillation frequencies of the two dimensional electrons in the device. The devices which use this resonance response should operate at much higher frequencies than conventional, transit-time limited devices — in the terahertz range — since the plasma waves propagate much faster than electrons. Recently, his team reported on a resonant detector operating in the terahertz range using an AlGaAs/GaAs 0.15 micron gate FET.
Selected Publications:
1. G. Liu et al. Graphene thickness-graded transistors with reduced electronic noise. Appl. Phys. Lett., 100, 3, 033103 (2012). DOI: 10.1063/1.3676277.
2. J. Wu et al. Bandgap engineering in MBE grown Al(1-x)Ga(x)N epitaxial columnar nanostructures. J. Phys. D: Appl. Phys., 45, 1, 015104 (2012).
DOI: 10.1088/0022-3727/45/1/015104.
3. K. Nogajewski et al. Localized and collective magnetoplasmon excitations in AlGaN/GaN-based grating-gate terahertz modulators. Appl. Phys. Lett., 99, 21, 213501 (2011). DOI: 10.1063/1.3663626.
4. M. Shur, M. Shatalov, A. Dobrinsky, and R. Gaska, Deep UV LEDs, in Advances in GaN and ZnO-based Thin Film, Bulk and Nanostructured Materials and Devices Springer Series in Material Science, pp. 83 - 120 2012, Steve Pearton, Editor.
5. M. Shur, Plasma Wave Terahertz Electronics, Electronics Letters, December, pp. S18-S21 (2010)
6. M. S. Shur and A. Žukauskas. Light Emitting Diodes: Toward Smart Lighting, in Smart Solid State Lighting, International Journal of High Speed Electronics and Systems, June (2011) World Scientific (2011) in M. S. Shur and A. Žukauskas, Smart Lighting, M. Shur, Editor, World Scientific (2011)
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