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Christian M. Wetzel
Wellfleet Career Development Constellation Professor, Future Chips; Professor of Physics
Contact:
(518) 276-3755
wetzel@rpi.edu
Home Page: http://www.rpi.edu/~wetzel/
Education:
Ph.D. (Dr. rer. nat.), Physics, Technical University Munich, 1993.
Career Highlights:
Wetzel was a Visiting Scientist at Lawrence Berkeley National Laboratory through 1996. In 1997 he joined the High Tech Research Center at Meijo University Nagoya, Japan. In October 2000 he joined Uniroyal Optoelectronics as a Senior Epi Scientist and Green Project Manager. He was responsible for new MOCVD epi processes and developed a production process for high brightness green GaInN/GaN LEDs.
Since March 2004 he is a Future Chips Constellation Professor and Associate Professor of Physics at Rensselaer. The Constellation comprises three chaired faculty who develop new concepts for light emitting devices and optoelectronics. Dr. Wetzel's work has been published in some 110 papers that received over 1500 citations.
Research Interests:
Wetzel’s research centers on the electronic band and defect structure of wide band gap semiconductor materials and devices by means of optical spectroscopy under external perturbation. Since 1993, Wetzel has focused on group-III nitrides with major contributions in the identification of the residual donor in GaN as oxygen and its DX-type behavior. In the group of Prof. Akasaki, he studied the processes of light emission in GaInN quantum wells. He demonstrated the dominance of piezoelectric polarization in the band structure and the light emission processes. At RPI he implements the concepts of piezoelectric bandstructure control to realize new concepts of high efficiency light emitting devices and solar cells. Current emphasis lies on high brightness light emitting diodes emitting in the 520 – 560 nm green spectral region.
Selected Publications:
1. Christian Wetzel and Theeradetch Detchprohm, “Wavelength-Stable Rare Earth-Free Green Light-Emitting Diodes for Energy Efficiency”, Optics Express 19(S4), A962-A971 (2011) doi:10.1364/OE.19.00A962. http://dx.doi.org/doi:10.1364/OE.19.00A962
2. Yufeng Li, Shi You, Mingwei Zhu, Liang Zhao, Wenting Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire”, Appl. Phys. Lett, 98(15), (April 2011). http://dx.doi.org/doi:10.1063/1.3579255 also Virtual Journal of Nanoscale Science & Technology, 23(16) (April 25, 2011).
3. Theeradetch Detchprohm, Mingwei Zhu, Wenting Hou, Edward. A. Preble, Drew Hanser, Tanya Paskova, and Christian Wetzel, ?”Highly Polarized Green Light Emitting Diode in m-axis GaInN/GaN”, Shi You, Appl. Phys. Exp. 3(10), 102103 (Oct 15, 2010). http://dx.doi.org/doi:10.1143/APEX.3.102103
4. Y. Xia, W. Hou, L. Zhao, M. Zhu, T. Detchprohm, and C. Wetzel, “Boosting Green GaInN/GaN Light Emitting Diode Performance by a GaInN Underlying Layer”, IEEE Trans. Electron Devices 57(10) 2639 - 2643 (2010). http://dx.doi.org/doi:10.1109/TED.2010.2061233
5. T. Detchprohm, and C. Wetzel, “GaInN based Green Light Emitting Diode for Energy Efficient Solid State Lighting”, J. Light Emitting Diodes, 2(1), F-XII-4 (April 2010).
6. Mingwei Zhu, Shi You, Theeradetch Detchprohm, Tanya Paskova, Edward A. Preble, and Christian Wetzel, “Various Misfit Dislocations in Green and Yellow GaInN GaN Light Emitting Diodes”, Phys. Stat. Sol. A 207(6), 1305-1308 (June 2010). http://dx.doi.org/doi:10.1002/pssa.200983645.
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